| 摘要 |
PURPOSE:To rough the surface of a capacitor electrode and to increase the capacitance. CONSTITUTION:An element isolation oxide film 1 is formed on a P-type semiconductor substrate and thereafter, a transistor region 11 is formed. After a silicon nitride film 12 is deposited on the whole surface, a source region 5a is exposed by photolithograph and dry etching. Moreover, a storage node electrode 13, which consists of a polycrystalline silicon film of a film thickness of 600nm and is used as a first capacitor electrode, is formed. After a titanium film 14 is deposited in a film thickness of 50nm, a heat treatment is performed for 30 seconds at 625 deg.C by an RTA method, the titanium film 14 deposited on the surface of the electrode 13 is silicified and a polycrystalline titanium silicide film 15 is formed. The films 14 and 15 are removed by wet etching and a capacitor insulating film 16 and a second capacitor electrode 17 are formed. |
