METHOD OF FORMING TRENCH ISOLATION BY POLISHING STEP AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE,申请号JP19920285052-传众专利搜索

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发明名称	METHOD OF FORMING TRENCH ISOLATION BY POLISHING STEP AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要
申请公布号	JPH05275527(A)	申请公布日期	1993.10.22
申请号	JP19920285052	申请日期	1992.09.30
申请人		发明人
分类号	H01L21/304;H01L21/3065;H01L21/3105;H01L21/311;H01L21/76;H01L21/762;(IPC1-7):H01L21/76	主分类号	H01L21/304
代理机构		代理人
主权项
地址

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