| 摘要 |
PURPOSE:To increase the transmission factor of the title film without increasing the resistivity of ZnO whose cost is low as compared with that of an ITO. CONSTITUTION:The concentration of Al2O3 which is used for a sputtering operation in order to lower a resistivity and which is added to a ZnO solar cell is suppressed to 1wt.% or lower, and hydrogen is added to Ar in a sputtering atmosphere. Thereby, the high transmission factor of the title film is achieved. In addition, a process to form a film by a sputtering operation and a process to expose the film to an atmosphere are repeated alternately. Thereby, the resistance of the title film can be made low. |
