| 摘要 |
PURPOSE:To lessen the process of manufacturing a ROM semiconductor memory device in turnaround time by a method wherein a ROM code write process is positioned as late as possible. CONSTITUTION:After an aluminum wiring 29 is formed, a first interlayer insulation film 27 of a matrix transistor part is selectively etched to make an opening, and phosphorus is thermally diffused using a second interlayer insulating film 30 in the opening as the its diffusion source to transform the matrix transistor into a depression type. |
