| 摘要 |
PURPOSE:To avoid the removal of a cap metal layer of a lower wiring layer during the connecting hole etching away step within the multilayer wiring forming step. CONSTITUTION:A lower wiring layer 14 is formed on an insulating film 12 covering a semiconductor substrate 10. Within the wiring layer 14 comprising a barrier metal layer such as WSi2, etc., an Al or Al alloy layer and a cap metal layer 14c such as WSi2, etc., are successively laminated upward, the cap metal layer 14c contains a conductive material such as Al, etc., using ion implanting step etc. After covering the whole surface with the wiring layer 14 and forming an insulating film 18, a connecting hole 18A is formed in the insulating film 18 by dry-etching step using a resist layer 20 as a mask as well as fluorine base gas e.g. CHF3, etc., as an etching gas. Through these procedures, a fluoride such as Al fluoride (AlF3), etc., can be produced so as to suppress the etching away step of the cap metal layer 14c.
|
