| 摘要 |
PURPOSE:To obtain a semiconductor device which is low in ON-state voltage, high in switching speed, and small in switching loss. CONSTITUTION:An N<-> epitaxial layer 1 provided with a P<+> substrate 2 and a projection 3, an N<+> diffusion region 4, and a P<+> diffusion region 13 are formed between electrodes 9 and 10, and control electrodes 6 are formed on an insulating film 5 sandwiching the N<+> diffusion region 4 and the projection 3 between them. With the electrode 10 at a higher potential than the electrode 9, the potential at the control electrodes 6 is varied whereby a potential barrier is generated or conductivity modulation is produced inside the N<-> epitaxial layer 1, so that a semiconductor device is turned ON or OFF. By this setup, holes injected at a turn-OFF time are extracted through the P<+> diffusion region 13, and the P<+> diffusion region 13 is lessened in resistance and distance without changing the N<+> diffusion region 4 in area when the holes are drawn out. Therefore, a semiconductor device can be lessened in switching loss and enhanced in switching speed as kept low in ON-state voltage.
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