| 摘要 |
PURPOSE:To provide an SOI substrate applicable in place of an expensive SOS and SIMOX substrates and a method of practically manufacturing it in high productivity, uniformity, and controllability. CONSTITUTION:The inner walls of the holes of a porous Si 12 formed on an Si substrate 11 are oxidized, a single crystal Si 13 is formed on the porous Si 12, the single crystal Si 13 is joined to another Si support substrate 14 (or light transmitting substrate 44) through the intermediary of an insulating layer 15, and the Si substrate 11 is selectively etched making the porous Si 12 serve as an etching stop layer. Then, the porous Si 12 is selectively removed with a liquid (hydrofluoric acid (+ hydrogen peroxide) (+ alcohol), or buffered hydrofluoric acid (+ hydrogen peroxide) (+ alcohol)) by chemical etching using the single crystal layer 13 as an etching stop layer, and a thin film layer 13 of single crystal structure is uniformly formed on the insulating layer 15.
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