| 摘要 |
PURPOSE:To enhance yield in an exposing process employing a chromeless type phase shift mask. CONSTITUTION:After performing first exposure to photoresist on the surface of a semiconductor wafer using a phase shifter 3 formed in a chromeless type phase shift mask 1, second exposure is performed at the same exposure region of the photoresist using a light shielding pattern 5 at least partially similar to the edge pattern of the phase shifter 3 thus preventing transfer of a defect 4. |
