| 摘要 |
PURPOSE:To improve long-life operation, characteristic temperature and operating temperature by providing a p-type clad layer with a p-type dopant doped thereto in separation from an active layer and also providing, between the active layer and the p-type clad layer, a multiple quantum well structure or a structure part of multiple quantum barrier having a low transmissivity to electrons. CONSTITUTION:A p-type clad 22 with a p-type dopant doped thereto is provided in separation from an active layer 3 and a multiple quantum well MQW or structural part 12 of multiple quantum barrier MQB having a low transmissivity for electrons is provided between the active layer 3 and p-type clad layer 22. Thereby, electrons particularly having a long diffusion length coming over the active layer toward the p-type dopant of the clad layer 22 are controlled and resultant recoupling between electrons and holes at the p-type clad layer 22, namely the recoupling at the portion other than the active layer 3 can be avoided. Accordingly, diffusion of p-type impurity to active layer 3 or movement of defect and damage on the active layer can be avoided by an energy released by recoupling at the clad layer 22. |
