| 摘要 |
PURPOSE:To increase the surface areas of storage nodes by a method wherein the crown-shaped storage nodes are formed without increasing the number of times of lithography and at the same time, a space smaller than the limitation of the resolution of the lithography is formed between the storage nodes. CONSTITUTION:A polycrystalline silicon film 30 is etched using a photoresist 31 pattern as a mask. Sidewalls are respectively formed of silicon oxide film on the sidewalls of the step of the film 30. The film 30 is again etched using the sidewalls as masks. Thereby, crown-shaped storage nodes 35 can be formed without increasing the number of times of lithography and at the same time, a space smaller than the limitation of the resolution of the lithography can be formed between the nodes 35. Accordingly, the surface areas of the nodes 35 are increased. Thereby, capacitance can be increased by a small number of processes. |
