| 摘要 |
PURPOSE:To realize that a switching memory device is formed of GaAs. CONSTITUTION:The title memory device is provided with the following: a high- resistance semiconductor; one pair of electrodes which are formed in the high- resistance semiconductor; an electric-field application means which applies an electric field of 0.5kV/cm or higher and 2.5kV/cm or lower to the high- resistance semiconductor between the pair of electrodes; an electron injection means which injects electrons into the high-resistance semiconductor near an anode out of the pair of electrodes and which generates a current control-type negative resistance; and a load means which is connected to at least one of the pair of electrodes and which takes out the current control-type negative resistance as hysteresis. |
