发明名称 High-frequency low-pass filter.
摘要 <p>A high-frequency low-pass filter includes a first dielectric layer (12). A second dielectric layer (18), a third dielectric layer (26), a fourth dielectric layer (32), and a fifth dielectric layer (38) are laminated on the first dielectric layer (12). An earth electrode (14) is formed on the first dielectric layer (12). A first capacitive open-circuited stub electrode (20) , a second capacitive open-circuited stub electrode (22) and a third capacitive open-circuited stub electrode (24) are formed on the second dielectric layer (18). A first strip line electrode (28) and a second strip line electrode (30) are formed on the third dielectric layer (26). The first and second strip line electrodes are formed as meander lines. A shield electrode (34) is formed on the fourth dielectric layer (32).</p>
申请公布号 EP0566145(A2) 申请公布日期 1993.10.20
申请号 EP19930106243 申请日期 1993.04.16
申请人 MURATA MANUFACTURING CO., LTD. 发明人 TONEGAWA, KEN;OKAMURA, HISATAKE
分类号 H01P1/203;(IPC1-7):H01P1/203 主分类号 H01P1/203
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