发明名称 |
High-frequency low-pass filter. |
摘要 |
<p>A high-frequency low-pass filter includes a first dielectric layer (12). A second dielectric layer (18), a third dielectric layer (26), a fourth dielectric layer (32), and a fifth dielectric layer (38) are laminated on the first dielectric layer (12). An earth electrode (14) is formed on the first dielectric layer (12). A first capacitive open-circuited stub electrode (20) , a second capacitive open-circuited stub electrode (22) and a third capacitive open-circuited stub electrode (24) are formed on the second dielectric layer (18). A first strip line electrode (28) and a second strip line electrode (30) are formed on the third dielectric layer (26). The first and second strip line electrodes are formed as meander lines. A shield electrode (34) is formed on the fourth dielectric layer (32).</p> |
申请公布号 |
EP0566145(A2) |
申请公布日期 |
1993.10.20 |
申请号 |
EP19930106243 |
申请日期 |
1993.04.16 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
TONEGAWA, KEN;OKAMURA, HISATAKE |
分类号 |
H01P1/203;(IPC1-7):H01P1/203 |
主分类号 |
H01P1/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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