| 摘要 |
<p>PURPOSE:To arrange elements on a substrate more densely and to enhance an yield per unit area by a method wherein each side of a rectangular region occupied by each element is set to be nearly parallel with the cleavage direction of the substrate, and the direction of each side in the plane shape of a mesa structure is set at nearly 45 deg. to the cleavage direction. CONSTITUTION:Elements 2 which contain a mesa structure at least in one part and whose shape occupies nearly a substantially rectangular region are arranged and formed on a substrate 1. In the manufacturing method of the semiconductor elements 2, each side of the rectangular region is set to be nearly parallel with the cleavage direction of the substrate 1, and the direction of each side in the plane shape of the mesa structure installed in the rectangular region is set at nearly 45 deg. to the cleavage direction of the substrate 1. For example, a plurality of photodetectors 2 are formed on a semiconductor substrate 1; each side of a rectangular region occupied by each element 2 is set to be nearly parallel with the cleavage direction of the substrate 1; the direction of each side in the plane shape of a photodetection part, i.e., a mesa, is set at nearly 45 deg. to the cleavage direction.</p> |
