| 摘要 |
<p>PURPOSE:To improve element symmetry and to obtain a good and large screen display which decreases the after images and seizure of a screen by consisting an insulator of a metallic oxide film and specifying the concn. of the impurity elements by an anodic oxidation soln. therein. CONSTITUTION:An ITO film is formed by a sputtering method on a substrate 1 and is patterned to a desired shape to form picture element electrodes 5. After resist patterns are formed for the above-mentioned purpose, the ITO film is etched by a liquid prepd. by mixing hydrochloric acid, nitric acid, water, etc., at each equal ratio and thereafter, the resist is peeled. The matrix array substrate constituted by forming nonlinear resistance elements 6 consisting of the plural picture element electrodes 5 and first metal 2-insulator 3-second metal 4 (MIM) element structures connected thereto on a substrate 1 is obtd. in such a manner. The insulator 3 is so formed as to attain <=5X10<18> atoms/cc concn. of boron which is the impurity element occurring in the anodic oxidation soln. by using an aq. soln. of borate for the chemical conversion soln. to be used at the time of forming the insulator by the anodic oxidation of the first metal 2.</p> |
