| 摘要 |
PURPOSE:To obtain a semiconductor light amplifying element provided with amplifying regions and the use of it, where at least one of the regions has a function to detect a voltage change at amplifying. CONSTITUTION:A semiconductor light amplifying element of semiconductor laser structure is provided with amplifying regions are electrically isolated into at least two or more regions in a light traveling direction by an isolating groove 15. An amplifying region serving as a region of detecting the wavelength of amplified light is composed of a second active layer mainly formed of a quantum well which has a gain in amplitude to an optional range of wavelength, and another amplifying region is formed of a first active layer 3a of bulk crystal which has a wavelength range of gain that is capable of containing the wavelength range of gain of the second active layer by an optional injection current 12. An input light amplified by the first active layer 3a is introduced into the wavelength detection region of the second active layer to change the detection region in voltage, whereby the wavelength of the amplified light can be found. |
