| 摘要 |
<p>PURPOSE:To improve throughput and reduce manufacturing cost, by providing a process for depositing metal on an insulating substratum and forming a light shielding layer, a process for oxidizing or nitriding the upper layer of the light shielding layer, and a process for depositing semiconductor on the oxidized or nitrided surface. CONSTITUTION:After only the element forming region of a quartz substratum 11 is etched, a light shielding layer 9, 19 is formed by depositing high melting point metal. The substratum is oxidized in an oxygen atmosphere. An Si3N4 layer 101 turning to a nucleus forming surface is deposited on the substratum, and an SiO2 layer turning to a non-nucleus-forming surface 102 is deposited. Silicon single crystal is polished to the height equal to the SiO2 film outside the element forming region, thereby obtaining a flat single-crystal layer. The substratum is thermally oxidized by heating it in an O2 atmosphere. A gate electrode 4 is formed by a usual manufacturing process. A source/drain region 5 is formed. An interlayer insulating film 7, a wiring 6, and a protective film 8 are formed.</p> |
