| 摘要 |
PURPOSE:To provide a formation method which is capable of forming a polycrystalline semiconductor film which provides larger crystal sizes and a high carrier mobility. CONSTITUTION:An intrinsic amorphous semiconductor film 2 and a amorphous semiconductor film 3 of one conductivity tape are formed on an uneven substrate 1 in this order. Then, they are heat-treated so that the impurities contained in the amorphous semiconductor film 3 may be diffused in the intrinsic amorphous semiconductor film 2 and further crystallized, thereby forming a polycrystalline semiconductor film 20. |
