| 摘要 |
PURPOSE:To completely remove the residue of etching generated when a transparent, conductive tin oxide film is etched. CONSTITUTION:First, a transparent, conductive tin oxide film is formed on a glass substrate using a spray method (at film-forming temperature of 450 deg.C and film thickness of 450nm). Then, the prescribed pattern of a solar battery is resist-printed on the surface of the transparent, conductive tin oxide film, and after drying, zinc is applied and an etching treatment is conducted by dipping into hydrochloric acid. Then, the resist is exfoliated, and a tin oxide patterning substrate, having a prescribed pattern, is obtained. Subsequently, this tin oxide patterning substrate is swingingly dipped in an ammonium hydrofluoric acid solution (1mol/l) for forty-five seconds, then the substrate is taken out and washed by pure water. Then, an amorphous silicon PiN layer is formed successively on the transparent film of the substrate using a CVD method, and an aluminum film is formed thereon as a back electrode by EB vapor deposition. |
