摘要 |
<p>PURPOSE:To obtain a pressure contact type semiconductor device and a power conversion using the same having excellent various characteristics even at a low, applied pressure, high reliability, a small size and a large capacity. CONSTITUTION:Heat buffer plates 4, 6 and 7, 5 are so provided as to be brought into contact with Al electrodes 3 on both main surfaces of an Si semiconductor 1, and soft layers 8, 9 made of group IB soft metal are respectively provided between the plates 4 and 6 and between the plates 7 and 5. The plates and the layers are pressurized by electrode leading members 10, 11 to be in pressure contact with the electrodes 3. Even when an applied pressure of a pressure contact type semiconductor device is reduced, a reduction in thermal resistance can be realized. The breaking capacity can be improved, a heat cycle capacity can be improved, and the device can be reduced in size.</p> |