| 摘要 |
PURPOSE:To provide a pattern forming method by a simple three-layer resist method. CONSTITUTION:A lower resist layer 13 is formed on a silicon substrate 11, and after a spin coat of a poly (siloxane) derivative having an alkoxi group, for example, poly (di-t-butoxy siloxane) is carried out on this lower layer 13, an acid treatment is carried out by means of acetic acid aqueous solution having 10vol.%, and a heat treatment is carried out further, and an SiO2 film 15 is formed as an intermediate layer. An upper resist layer 17 is formed on this intermediate layer 15. Patterning is carried out on this layer 17 after exposure is carried out by means of an electron beam and development is also carried out, and next, after CHF3-RIE is carried out to the intermediate layer, O2-RIE is carried out to the lower layer. |
