| 摘要 |
PURPOSE:To form a semiconductor compound substrate by setting the height of a first semiconductor substrate surface to be equal to that of an insulation film surface and joining a second semiconductor substrate. CONSTITUTION:A silicon dioxide film 5 is formed on the bottom surface of a groove part 3 of a first Si substrate 1. Parts other than a specified part where the groove part 3 of a main surface 11 of the first Si substrate 11 are polished, thus making a mirror finished surface 12 the surface of the silicon dioxide film flush with the surface of the silicon dioxide film 5 on the bottom surface. One main surface 13 of an N<+>-type second Si substrate 10 with a high impurity concentration is subjected to contact bonding to the mirror finished surface 12 and the surface of the silicon dioxide film 5 and is subjected to heat treatment, thus connecting silicon atoms on a boundary surface between the mirror surface 12 of the first Si substrate and one main surface 13 of the second Si substrate 10. Then, an SOI substrate which is a semiconductor compound substrate is formed by the first Si substrate 1 and the second Si substrate 10 with other main surface 14 of the first Si substrate 1 and a specified thickness.
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