| 摘要 |
PURPOSE:To provide the production method for silicon carbide thin film containing crystallite phase which is superior in electrical and optical characteristics, in semiconductor thin films. CONSTITUTION:A plasma CVD system is provided with a hydrogen gas line 1 and a material gas line and pneumatic valves 3 and 4 are controlled with a timer. After silicon carbide semiconductor thin films have been grown on a substrate 7 by using material gas containing silicon and carbon elements, the material gas is removed from a reaction chamber and then hydrogen gas is led into the chamber so that the silicon carbide semiconductor thin films may be applied with hydrogen plasma treatment. Therefore it becomes easy to obtain the silicon carbide semiconductor thin films which contain uniform crystallite phase in a wide area. |
