发明名称 METHOD AND APPARATUS FOR DEVELOPING RESIST
摘要 PURPOSE:To quickly form a developer film on a resist film without including bubbles with a minimum amount of developer by holding a resist surface of a wafer close onto a processing plate and filling a slit with the developer from the centere of the plate surface. CONSTITUTION:A wafer is rotated and developed only with developer 19' fed from a liquid feed port 16 into a narrow slit 15 between a resist film 12 on a wafer 13 to be processed and a processing plate 11. If, at this time, the distance of the slit 15 between the resist film 12 and the processing plate 11 is maintained at a distance wherein developer 19 rapidly spreads due to surface tension, the entire slit 15 is filled with developer 19 instantaneously 15 so that no in-plane distribution occurs during the development and since the developer 19 spreads from the center of the wafer 13 toward a periphery, no bubbles are contained and no uneven development occurs. Thus the developer can be largely reduced in quantity, as well as in-plane distribution of development and uneven development can be prevented, thereby improving yield quality of resist development.
申请公布号 JPH05267151(A) 申请公布日期 1993.10.15
申请号 JP19920060777 申请日期 1992.03.18
申请人 发明人
分类号 G03F7/30;H01L21/027;H01L21/30;(IPC1-7):H01L21/027 主分类号 G03F7/30
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