| 摘要 |
The anti-fuse is prepared by forming the first and the second diffusing areas on a substrate, removing the first preformed thermal oxidizing film and forming the second thermal film, forming 1st polysilicon film and 2nd photoresist, forming 2nd photoresist pattern having a hole by using a pouring mask of a chemical solution, precipitating the chemical solution on the exposed 1st polysilicon film to form a chemical-solution-impregnation 2nd thermal oxidizing film, forming 2nd polysilicon film on 1st polysilicon film, ion-implanting or POCl3 doping, patterning, forming an insulating film on all face, forming a conductive pad connected with 2nd polysilicon film and the diffusing area.
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