发明名称 High purity crystal growing for semiconduct - ors
摘要 <p>Crystals of low melting point materials, especially those with large difference between melting point and crystallisation point, such as gallium, are grown from seed crystal held in rotating, vertically reciprocating holder in vacuum chamber above crucible containing melt. A cooler for the crystal is built into the crystal holder and pref. uses compressed air flowing through nozzle plates and ducts towards crystal.</p>
申请公布号 FR2070492(A5) 申请公布日期 1971.09.10
申请号 FR19690042218 申请日期 1969.12.05
申请人 GOSUDARSTVENNY NAUCHNO 发明人
分类号 C30B15/02;C30B15/32;(IPC1-7):01J17/00 主分类号 C30B15/02
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