| 摘要 |
The semiconductor memory device having a dual multilayer capacitor is prepared by forming a MOSFET having a gate electrode and a source/drain electrode, forming 1st charge-keeping electrode on the contacted source and gate electrodes with isolating MOSFET with 1st isolating film, forming 1st multilayer capacitor having 1st capacitor dielectric film and 1st plate electrode thereon, forming 2nd, 3rd isolating films, forming bitline contacted with drain electrode, forming 3rd contact groove, forming an isolating spacer at the groove sidewall, contacting 2nd charge-keeping electrode with 1st through 3rd contact groove, forming 2nd multilayer capacitor having 2nd capacitor dielectric film and 2nd plate electrode. |
