Film carrier type substrate and method of manufacturing the same.

摘要

A film carrier type substrate (20) includes a film (21) made of organic high molecular substance, a metal layer (23) formed over the film by depositing metal vapor and irradiating nitrogen gas ions on the film and a mixing layer (22) made of a mixture of the materials of both the metal layer and the film formed in the interface between the metal layer and the film. Prior to forming the metal layer, inert gas ions and/or nitrogen gas ions may be irradiated on the film in advance. <IMAGE>