Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different graded band gaps,申请号US19910796394-传众专利搜索

发明名称	Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different graded band gaps
摘要
申请公布号	US5252142(A)	申请公布日期	1993.10.12
申请号	US19910796394	申请日期	1991.11.22
申请人	CANON KABUSHIKI KAISHA	发明人	MATSUYAMA, JINSHO;MURAKAMI, TSUTOMU;MATSUDA, KOICHI;YAMAMOTO, HIROSHI;YAMASHITA, TOSHIHIRO
分类号	H01L31/04;H01L31/0352;H01L31/075;H01L31/20;(IPC1-7):H01L31/075	主分类号	H01L31/04
代理机构		代理人
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