| 摘要 |
PURPOSE:To obtain single crystal of LiNbO3 having slight warpage and strain by impressing a DC electric field to growth crystal of LiNbO3 by Czochralski method by setting the initial side of crystal growth as a cathode and the end side as an anode. CONSTITUTION:The end side of crystal growth of LiNbO3 growing crystal 1 by Z-axis pulling by Czochralski method is placed through a sintered LiNbO3 porcelain 2b on a platinum plate 3b, a platinum plate 3a is loaded through a sintered LiNbO3 porcelain 2a on the growing crystal 1 and a weight 4 is placed on the platinum plate. A DC electric field is impressed by setting the platinum plate 3a as a cathode and the platinum plate 3b as an anode and the growing crystal is heated to 1,150-1,190 deg.C within 10-20 hours, maintained for 1-5 hours and annealed. |
