发明名称 |
Bipolar transistor structure with reduced collector-to-substrate capacitance |
摘要 |
A pre-processed substrate structure for a semiconductor device. A subcollector layer is spaced apart from a substrate by a dielectric. A relatively small, lightly-doped epitaxial feed-through layer extends through the dielectric between the substrate and the subcollector. A transistor constructed over the subcollector has very low collector-to-substrate capacitance. A plurality of devices on a common substrate are electrically isolated from each other by channel stops formed in the substrate around each device.
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申请公布号 |
US5252143(A) |
申请公布日期 |
1993.10.12 |
申请号 |
US19920837683 |
申请日期 |
1992.02.18 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
CHIANG, SHANG-YI;KAMINS, THEODORE I. |
分类号 |
H01L29/08;H01L29/732;H01L29/737;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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