| 摘要 |
PURPOSE:To improve the characteristics of the subject device by making on a substrate a thin film with chalcopyrite structure of specific formula I or II using molecular beams and ion beams of group I, III, VI, and V elements in a vacuum chamber. CONSTITUTION:In a high-vacuum chamber 1, Mo is put to vacuum deposition on a quartz glass substrate 18 using a target 7 for electron beam deposition and an electron gun 8. The substrate with the resultant Mo electrode layer is then fitted to a substrate holder 2 in a thin film-forming chamber 20. Thence, using group I, III, and VI metals such as Cu, In and Se as molecular beam sources 3, heated metallic vapor is emitted on the substrate surface. The atmosphere is heated using a group V element such as in the form of N2 gas as an ion beam source 4, electron impact is repeated to a high-density plasma. With this method, (A) a layer given by formula III such as n-type CuInSe2 on the Mo electrode layer and (B) a compound semiconductor layer with chalcopyrite structure given by formula I such as p-type CuInSe2-xNx on the layer of the formula III are made, thus obtaining the objective thin film p-n homo junction semiconductor device. |
