发明名称 Chemical vapor deposition method using an actively cooled effuser to coat a substrate having a heated surface layer
摘要 An actively cooled effuser for a vapor deposition reactor is placed in very close proximity to a substrate. The actively cooled effuser has combinations of gas directing plates, cooling plates and isolation plates attached together. Reactants and coolant are input into the stack of plates so formed. Selective heating of the substrate surface may occur through the use of heating lamps. Multiple units of the actively cooled effuser and heating lamps may be used in the reactor to form multiple layers on the substrate. The cooling plate has a cooling channel within a few thousandths of an inch of the output side of the stack. The presence of the cooling plates allows the effuser to be placed in very close proximity to the selectively heated substrate.
申请公布号 US5252366(A) 申请公布日期 1993.10.12
申请号 US19920991502 申请日期 1992.12.16
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE 发明人 AHERN, BRIAN S.;WEYBURNE, DAVID W.
分类号 C23C16/44;C23C16/455;C23C16/48;C23C16/54;(IPC1-7):C23C16/46 主分类号 C23C16/44
代理机构 代理人
主权项
地址