| 摘要 |
PURPOSE:To improve mass productivity and yield by forming a reverse-conductive type semiconductor layer on a mono-conductive type semiconductor substrate, and forming, on the reverse-conductive type semiconductor layer, V-shape or trapezoid-shape grooves extending to the mono-conductive type semiconductor layer beyond the reverse- conductive type semiconductor layer with the use of etching treatment. CONSTITUTION:Silicon oxide is formed on the surface of a substrate 1 consisting of semiconductors, and boron glass is formed all over the reverse side of the substrate. Then, a P<+>-type layer 11 is formed all over the reverse side of the substrate due to oxidization and diffusion in wet oxygen at high temperatures. Next. phosphorus glass or arsenic glass 23 is formed after silicon oxide on the surface of the substrate 1 is eliminated, and then a reverse-conductive type semiconductor 7 is formed by oxidizing and diffusing at high temperatures. Successively, the residual regions 21-23 are provided by eliminating selectively glass coating film, and V-shape or trapezoid-shape grooves are formed so that the projected portion of an N<+>-type region can be extended continuously to the portion of the N<+>-type region below an electrode under the coating film 22 by anisotropic etching. After that, a photoelectric conversion device is made by providing a silicon nitride coating film 3, an opposing electrode 21, a supplementary electrode 5, and a wiring lead 3. |
