| 摘要 |
PURPOSE:To enhance a semiconductor device possessed of an insulating film/ compound semiconductor structure, an semiconductor/compound semiconductor structure, and a metal/compound semiconductor structure in characteristics. CONSTITUTION:The clean surface of clean III-V compound semiconductor 50 with no oxide is irradiated with a tellurium molecular beam or telluride gas to react, whereby a modified layer 2 of telluride of the component elements of the compound semiconductor is formed. By this setup, the free bonds of the surface of the compound semiconductor 50 are terminated with telluride to stop an interface level from being produced. By the use of tellurium, the compound semiconductor layer 50 can be prevented from deteriorating in characteristics due to the diffusion of the terminal atom into the layer 50 from the modified layer 2. |
