| 摘要 |
PURPOSE:To enable an absorbent pattern to be easily formed with high positional precision required for a device pattern on sub-quarter micron order. CONSTITUTION:The manufacturing method of X-ray mask comprises the step wherein the first X-ray mask formed using the first mask blank 4 imposing arbitrary absorbent stress is used as a master mask 6 and then a pattern 3P of the master mask 6 is transferred by X-ray exposing step on the second mask blank 8 the absolute value of the absorbent stress of which is nearly equal to that of the first mask blank 4 and the sign of the absorbent stress of which is opposite to that of the blank 4 so as to form the second X-ray mask 10 for actual exposure comprising the second mask blank 8. |
