| 摘要 |
PURPOSE:To increase a maximum controllable current due to elimination of an unnecessary operation of a parasitic thyristor by forming a second current electrode connected to a lower surface of a first semiconductor layer. CONSTITUTION:P-type regions 3a, 3b, 3c are separated by n<+> type diffused regions 4a, 4b and an oxide film 9 on a surface of an n<-> type layer 2 formed on a p<+> type substrate 1. Gate electrodes 5a, 5b are formed above the regions 3a, 3b so as to be insulated from a periphery by an oxide film 6. An AlSi electrode 7 is brought into contact with the regions 3a and 4a, and a metal electrode 8 is brought into contact with the substrate 1. Thus, a thyristor operation of the regions 4a, 3a, the layer 2 and the substrate 1 is avoided due to intermediary of the film 9. |
