| 摘要 |
<p>PURPOSE:To control a tapering of etching at the edge of a high-quality etched pattern with good reproducibility and at low costs by a method wherein the etching rate with reference to an etchant of a material to be etched is made different in the thickness direction. CONSTITUTION:A mask pattern composed of a resist or the like is formed on materials 3-1, 3-2 to be cthed; in succession, said materials 3-1, 3-2 to be etched are etched by using a single etchant. In such a wet etching method, the materials 3-1, 3-2 to be etched are formed as a multilayer structure, and the etching rate with reference to the etchant of the respective layers 3-1, 3-2 is made different. In an MIM element which is provided with a laminated structure by a lower electrode 3/an element insulating film 4/an upper electrode 5 formed on a substrate 1 and in which the lower electrode 3 is patterned and formed by a wet etching operation, the etching rate of the lower electrode 3 with reference to an etchant for lower-electrode pattern etching use is made different in the film thickness direction.</p> |
