| 摘要 |
PURPOSE:To prevent the degradation in the opening rate based on alignment errors at the time of assembly by forming a light shielding film in common use as a black mask between a transparent substrate and an insulating film. CONSTITUTION:A thin film consisting of Cr, etc., is deposited on the transparent substrate 31 to form the light shielding film 61 opened with regions for picture element electrodes thereon. SiO2 is deposited as the insulating film 33 on the transparent substrate 31 formed with the light shielding film 61 and thereafter, a positive resist is applied thereon and is exposed from the rear surface of the transparent substrate 31 with the light shielding film 61 as a mask, by which the picture element electrode patterns are baked to the resist film. In succession, another photomask is deposited on the resist on the insulating film 33 and is exposed from the front surface of the transparent substrate 31, by which the source electrode patterns, drain electrode patterns and drain bus patterns to be formed on the insulating film 33 are baked. Namely, the light shielding film 61 in common use as the black mask which is opened with only the forming regions of the picture element electrodes 34 and shields the light of the other regions is formed between the transparent substrate 31 of the TFT substrate 6 and the insulating film 33. |
