METHOD FOR MANUFACTURING A CAPACITOR

摘要

A method of fabricating a capacitor for increasing capacitance is disclosed. The process includes the steps of forming a first storage node on the substrate where a transistor is formed thereon forming a first dielectric layer on the surface of the first storage node and on the predetermined portion of the impurity region of the transistor adjacent to first storage node, forming a common plate electrode on the first dielectric layer, forming a second dielectric layer on the surface of the common plate electrode, depositing a third polysilicon on the resultant and patterning a third polysilicon layer to form a second storage node. Capacitance is increased by connecting the capacitors parallel.