| 摘要 |
PURPOSE:To provide high quality to a mask base material for a photomask used in manufacture of LSI, etc. by using an Si or Ge layer or an Si-Ge mixed layer, as the shielding layer of the material, to which a III or V group element in the periodic table has been added. CONSTITUTION:When transparent substrate 21 is covered with Si-Ge layer 22 as a shielding layer, hydride of a III or V group element such as B or Ga is fed together with silicon hydride and germanium hydride using H2 gas as carrier to form mask base material 22 on glass substrate 21. After coating layer 22 with resist film 24 made of polymethyl methacrylate or the like a pattern is drawn with electron beams and developed to form resist pattern 25. Exposed film 22 is then etched selectively by reactive sputtering technique to form mask pattern 26, thus manufacturing photomask 27. This pattern is of high accuracy and free from pattern deformation due to electric charging in the electron beam drawing. |
