| 摘要 |
A memory device having a large capacitor area and improved reliability, is prepared by (A) depositing a polysilicon film (8) for first storage node with 1,000 3,000 angstroms thickness, (B) depositing an SOG film (9) 1,000 3,000 angstroms thicker than that of the film (8), (C) forming connectig part by removing a portion of the SOG film (9), (E) depositing a wholly doped polysilicon film (10) for storage node 2,500 3,500 angstroms thicker than that of the SOG film (9) to fill the connecting region of the buried contact and the polysilicon film (8), (F) limiting the storage node region and removing the remained SOG film, and (G) forming a capacitor dielectric film and doped polysilicon film for plate, and removing an unnecessary portion.
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