发明名称 |
A field effect transistor. |
摘要 |
<p>A field effect transistor is disclosed. The field effect transistor includes: a semiconductor substrate having at least an upper face; a semiconductor layered structure, formed on the upper face of the semiconductor substrate, the semiconductor layered structure including a channel layer; a source electrode formed on the semiconductor layered structure; a drain electrode formed on the semiconductor layered structure at a position apart from the source electrode in a first direction by a prescribed distance; and a gate electrode, formed on the semiconductor layered structure between the source electrode and the drain electrode. The channel layer includes: a first channel region positioned directly under the source electrode; a second channel region positioned directly under the drain electrode; a third channel region which is adjacent to the first channel region and which is not positioned directly under the gate electrode; a fourth channel region which is adjacent to the second channel region and which is not positioned directly under the gate electrode; and a plurality of stripe-like middle channel regions for connecting the third channel region to the fourth channel region.</p> |
申请公布号 |
EP0563847(A2) |
申请公布日期 |
1993.10.06 |
申请号 |
EP19930105153 |
申请日期 |
1993.03.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKATSUKA, TADAYOSHI;INOUE, KAORU;FUJIMOTO, HIROMASA;YAGITA, HIDEKI |
分类号 |
H01L29/10;H01L29/812;H01L21/335;H01L21/338;H01L29/778 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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