发明名称 |
METHOD AND APPARATUS FOR CORRECTING DEFECTS OF X-RAY MASK |
摘要 |
The present invention relates to method and apparatus for correcting defects of an X-ray mask comprising the steps of: irradiating a focused ion beam to at least a region having a defective portion of an X-ray mask (200) having a protective film (204, 304) and eliminating the protective film; exposing a circuit pattern (205, 305) having a defective portion (150, 160) locating under the region or setting this circuit pattern to the state near the exposure; detecting at least one of the secondary electrons, secondary ions, reflected electrons, and absorbing current generated from that region and detecting a true defective position; positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion; and thereby correcting the defect. |
申请公布号 |
EP0298495(B1) |
申请公布日期 |
1993.10.06 |
申请号 |
EP19880110937 |
申请日期 |
1988.07.08 |
申请人 |
HITACHI, LTD. |
发明人 |
YAMAGUCHI, HIROSHI;SAITO, KEIYA;KOIZUMI, MITSUYOSHI;SHIMASE, AKIRA;HARAICHI, SATOSHI;MIYAUCHI, TATEOKI;KUNIYOSHI, SHINJI;AIUCHI, SUSUMU |
分类号 |
G01Q70/14;G03F1/00;G03F1/22;H01L21/027;H01L21/30 |
主分类号 |
G01Q70/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|