发明名称 METHOD AND APPARATUS FOR CORRECTING DEFECTS OF X-RAY MASK
摘要 The present invention relates to method and apparatus for correcting defects of an X-ray mask comprising the steps of: irradiating a focused ion beam to at least a region having a defective portion of an X-ray mask (200) having a protective film (204, 304) and eliminating the protective film; exposing a circuit pattern (205, 305) having a defective portion (150, 160) locating under the region or setting this circuit pattern to the state near the exposure; detecting at least one of the secondary electrons, secondary ions, reflected electrons, and absorbing current generated from that region and detecting a true defective position; positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion; and thereby correcting the defect.
申请公布号 EP0298495(B1) 申请公布日期 1993.10.06
申请号 EP19880110937 申请日期 1988.07.08
申请人 HITACHI, LTD. 发明人 YAMAGUCHI, HIROSHI;SAITO, KEIYA;KOIZUMI, MITSUYOSHI;SHIMASE, AKIRA;HARAICHI, SATOSHI;MIYAUCHI, TATEOKI;KUNIYOSHI, SHINJI;AIUCHI, SUSUMU
分类号 G01Q70/14;G03F1/00;G03F1/22;H01L21/027;H01L21/30 主分类号 G01Q70/14
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