PASSIVATION FILM FORMING METHOD OF HETERO JUNCTION TRANSISTOR

摘要

A passivation layer of hetero-barrier transistor for reducing surface leak current of a semiconductor device, is prepared by (1) forming a sulfur passivation layer with ammonium sulfide ?(NH4)2Sx(x=0.2-2.0)? on the barrier transistor, (2) forming a aluminum arsenide layer(9) and an insulation gallium arsenide layer(10) on the passivation layer by MBE (molecular beam epitaxy) under room temperature and low temperature. It is also used for passivation layer of MESFET, HEMF and laser diode.