| 发明名称 |
A POLY-EMITTER STRUCTURE WITH IMPROVED INTERFACE CONTROL |
| 摘要 |
A polyemitter structure having a thin interfacial layer (5) deposited between the n+ in-siter doped polysilicon emitter contact (7) and the crystalline silicon emitter (3), as opposed to a regrown SiOx layer, has improved reproducibility and performance characteristics. A n-doped hydrogenated microcrystalline silicon (n- mu c-Si:H) film can be used as the deposited interfacial film between a crystalline silicon emitter and a polycrystalline silicon contact. <IMAGE> |
| 申请公布号 |
EP0543759(A3) |
申请公布日期 |
1993.10.06 |
| 申请号 |
EP19920480148 |
申请日期 |
1992.10.09 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JENG, SHWU JEN;KANICKI, JERZY;KOTECKI, DAVID E.;PARKS, CHRISTOPHER CARR;TIEN, ZU-JEAN |
| 分类号 |
H01L29/43;H01L21/205;H01L21/225;H01L21/28;H01L21/331;H01L29/45;H01L29/73;H01L29/737;(IPC1-7):H01L29/46 |
主分类号 |
H01L29/43 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
