| 发明名称 |
IMPROVED HIGH VOLTAGE THIN FILM TRANSISTOR HAVING A DRIFT REGION WITH A LINEAR DOPING PROFILE AND A FIELD PLATE |
| 摘要 |
The present invention involves an improvement in the structure and method for making a high voltage thin film transistor of the silicon-on-insulator (SOI) type. In particular, the present invention sets forth the structure and technique for making this improved structure in which a gate electrode is formed extending over the linear doping profile so as to shield the drift region from external electric fields and decrease on-state resistance. <IMAGE> |
| 申请公布号 |
EP0549042(A3) |
申请公布日期 |
1993.10.06 |
| 申请号 |
EP19920203924 |
申请日期 |
1992.12.15 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
MERCHANT, STEVEN |
| 分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/40;H01L29/423;H01L29/739;H01L29/78;H01L29/786;H01L29/861 |
主分类号 |
H01L21/336 |
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