发明名称 |
Process for the production of thin film transistors |
摘要 |
Process for the local passivation of a substrate by a hydrogenated amorphous carbon layer and process for producing thin film transistors on said passivated substrate. The local passivation process consists of producing photosensitive resin patterns (3) on the substrate (1), subjecting the structure obtained to a radio-frequency plasma essentially constituted by a hydrocarbon for thus depositing a hydrogenated amorphous carbon layer (6) on the structure and dissolving the resin patterns (3) in order to eliminate the amorphous carbon deposited on the resin, the amorphous carbon deposited on the substrate constituting the said passivation.
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申请公布号 |
US5250451(A) |
申请公布日期 |
1993.10.05 |
申请号 |
US19920866342 |
申请日期 |
1992.04.10 |
申请人 |
FRANCE TELECOM ETABLISSEMENT AUTONOME DE DROIT PUBLIC |
发明人 |
CHOUAN, YANNICK |
分类号 |
C01B31/02;H01L21/205;H01L21/314;H01L21/336;H01L21/48;H01L23/14;H01L23/15;H01L29/78;H01L29/786;(IPC1-7):H01L21/265 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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