发明名称 Process for the production of thin film transistors
摘要 Process for the local passivation of a substrate by a hydrogenated amorphous carbon layer and process for producing thin film transistors on said passivated substrate. The local passivation process consists of producing photosensitive resin patterns (3) on the substrate (1), subjecting the structure obtained to a radio-frequency plasma essentially constituted by a hydrocarbon for thus depositing a hydrogenated amorphous carbon layer (6) on the structure and dissolving the resin patterns (3) in order to eliminate the amorphous carbon deposited on the resin, the amorphous carbon deposited on the substrate constituting the said passivation.
申请公布号 US5250451(A) 申请公布日期 1993.10.05
申请号 US19920866342 申请日期 1992.04.10
申请人 FRANCE TELECOM ETABLISSEMENT AUTONOME DE DROIT PUBLIC 发明人 CHOUAN, YANNICK
分类号 C01B31/02;H01L21/205;H01L21/314;H01L21/336;H01L21/48;H01L23/14;H01L23/15;H01L29/78;H01L29/786;(IPC1-7):H01L21/265 主分类号 C01B31/02
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