发明名称 Method of depositing conductive lines on a dielectric
摘要 A method of depositing micron-sized metal lines on a dielectric substrate, such as polyimide. The dielectric is covered with a thin metallic layer, of a first metal placed in a reaction cell containing a gas-phase molecular species containing a second metal, and exposed to a focused laser beam. A translation stage moves the dielectric relative to the beam to selectively deposit micron-sized second metal lines on the metallic layer. The metallic layer on the unirradiated portion of the substrate is subsequently etched away, leaving the lines adhered to the dielectric surface.
申请公布号 US5250329(A) 申请公布日期 1993.10.05
申请号 US19920976057 申请日期 1992.11.13
申请人 MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION 发明人 MIRACKY, ROBERT;YATER, JOAN E.;MACKAY, COLIN A.
分类号 C23C16/04;H01L21/3205;H05K3/14;(IPC1-7):B05D3/06;C23C14/00;C23C16/00;H01L21/306 主分类号 C23C16/04
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