发明名称 |
Method of depositing conductive lines on a dielectric |
摘要 |
A method of depositing micron-sized metal lines on a dielectric substrate, such as polyimide. The dielectric is covered with a thin metallic layer, of a first metal placed in a reaction cell containing a gas-phase molecular species containing a second metal, and exposed to a focused laser beam. A translation stage moves the dielectric relative to the beam to selectively deposit micron-sized second metal lines on the metallic layer. The metallic layer on the unirradiated portion of the substrate is subsequently etched away, leaving the lines adhered to the dielectric surface.
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申请公布号 |
US5250329(A) |
申请公布日期 |
1993.10.05 |
申请号 |
US19920976057 |
申请日期 |
1992.11.13 |
申请人 |
MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION |
发明人 |
MIRACKY, ROBERT;YATER, JOAN E.;MACKAY, COLIN A. |
分类号 |
C23C16/04;H01L21/3205;H05K3/14;(IPC1-7):B05D3/06;C23C14/00;C23C16/00;H01L21/306 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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