| 摘要 |
A thin film transistor includes a gate insulating film, a plurality of gate electrodes arranged on one surface of the gate insulating film, and a thin film semiconductor island formed on the other surface of the gate insulating film and having portions each corresponding to one of the gate electrodes. The island includes a source region in which ion impurities are diffused at high density and located at one end of the island, a drain region in which ion impurities are diffused at high density and located at the other end of the island, a first low impurity region in which ion impurities are diffused at lower density than that of the drain region and located between the drain region and one of the portions adjacent to the drain region, and a second low impurity region in which ion impurities are diffused at lower density than that of the drain region and located between at least one of the portions.
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