发明名称 |
Photovoltaic device |
摘要 |
This invention relates to a photovoltaic device, such as a solar cell or a photosensor, which comprises an amorphous silicon semiconductor photosensitive layer and, as disposed on respective sides thereof, a transparent electrode and a rear electrode. The rear electrode is a multi-layer structure constructed by alternately successive depositions, each in a thickness of 0.3 to 50 nm, of two or more metals selected from the group consisting of Cu, Ag, and Au. In using such a Cu/Ag multi-layer structure or an Au/Ag multi-layer structure as the rear electrode, the thickness of each Cu or Au layer is controlled at 0.3 to 20 nm and that of each Ag layer at 1 to 50 nm. The total thickness of the rear electrode is 20 nm to 1 mu m. This construction insures improved photoelectric conversion efficiency and improved reliability of the device.
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申请公布号 |
US5250120(A) |
申请公布日期 |
1993.10.05 |
申请号 |
US19910802996 |
申请日期 |
1991.12.05 |
申请人 |
KANEGAFUCHI CHEMICAL INDUSTRY CO., LTD. |
发明人 |
TAKADA, JUN;NAKAJIMA, AKIHIKO;HAYASHI, KATSUHIKO;ASAOKA, KEIZO;TAWADA, YOSHIHISA |
分类号 |
H01L31/10;H01L31/0224;H01L31/04;H01L31/075;(IPC1-7):H01L31/04;H01L31/022;H01L31/037 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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